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Home › MOS transistor and method of forming the MOS transistor with a SiON etch stop layer that protects the transistor from PID and hot carrier degradation

MOS transistor and method of forming the MOS transistor with a SiON etch stop layer that protects the transistor from PID and hot carrier degradation

US Patent 7645657 · Granted Jan 12, 2010

Estimated economic value: $4,431,000 ⓘ

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