Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Techniques for improving negative bias temperature instability (NBTI) lifetime of field effect transistors

Techniques for improving negative bias temperature instability (NBTI) lifetime of field effect transistors

US Patent 7629653 · Granted Dec 8, 2009

Estimated economic value: $8,214,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nonvolatile charge trap memory device having a high dielectric constant blocking2025
Nonvolatile charge trap memory device having a high dielectric constant blocking2025
Oxide-nitride-oxide stack having multiple oxynitride layers2025
Methods of equalizing gate heights in embedded non-volatile memory on HKMG techn2025
Executing gestures with active stylus2025
Differential sensing in an active stylus2025
Method of forming oxide-nitride-oxide stack of non-volatile memory and integrati2025
Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile memory device2024
Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile memory device2024
Composition and method for cultivation, expansion, preservation and/or cell pret2024
Hyper temporal lidar with dynamic shot scheduling using a laser energy model2024
Method of ono integration into logic CMOS flow2024