Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Stress relaxation, selective nitride phase removal

Stress relaxation, selective nitride phase removal

US Patent 7541277 · Granted Jun 2, 2009

Estimated economic value: $7,754,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Buried power rail at tight cell-to-cell space2025
Structure containing a via-to-buried power rail contact structure or a via-to-ba2025
Layered substrate structures with aligned optical access to electrical devices2024
Create a protected layer for interconnects and devices in a packaged quantum str2024
Ionizing radiation blocking in IC chip to reduce soft errors2020
Process integration techniques using a carbon layer to form self-aligned structu2020
Method for bottom-up deposition of a film in a recessed feature2018
Insulating a via in a semiconductor substrate2018
Flip chip alignment mark exposing method enabling wafer level underfill2017
Insulating a via in a semiconductor substrate2017
Protected through semiconductor via (TSV)2017
Method for using post-processing methods for accelerating EUV lithography2017