Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › SiC material, semiconductor device fabricating system and SiC material forming method

SiC material, semiconductor device fabricating system and SiC material forming method

US Patent 7410923 · Granted Aug 12, 2008

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

SiC wafer and manufacturing method for SiC wafer2024
Method for manufacturing reformed sic wafer, epitaxial layer-attached sic wafer,2022
Surface treatment method for SiC substrate2020
Heat treatment vessel for single-crystal silicon carbide substrate and etching m2020
Susceptor and method for manufacturing same2019
Etching method for SiC substrate and holding container2019
Seed material for liquid phase epitaxial growth of monocrystalline silicon carbi2019
SiC substrate treatment method2018
Method for estimating depth of latent scratches in SiC substrates2018
Method for epitaxial growth of monocrystalline silicon carbide using a feed mate2017
Storing container, storing container manufacturing method, semiconductor manufac2017
Semiconductor device manufacturing apparatus2017