Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Polymers based on cinnamic acid as a bottom antireflective coating for 157 NM photolithography

Polymers based on cinnamic acid as a bottom antireflective coating for 157 NM photolithography

US Patent 7405028 · Granted Jul 29, 2008

Estimated economic value: $504,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electromechanical component, electromechanical component arrangement, method of 2021
Method for multiple irradiation of a resist2012
Photoresist suitable for use in 157 nm photolithography and including a polymer 2007
Silicon-containing resist for photolithography2006
Process for silylating photoresists in the UV range2006
Photoresist based on polycondensates and having an increased resolution for use 2006
Photoresists with reaction anchors for chemical consolidation of resist structur2006
Silicon resist for photolithography at short exposure wavelengths and process fo2005
Process for sidewall amplification of resist structures and for the production o2005
CHEMICALLY AMPLIFIED PHOTORESIST AND PROCESS FOR STRUCTURING SUBSTITUENTS USING 2004
Negative resist process with simultaneous development and silylation2004
Amplification of resist structures of fluorinated resist polymers by structural 2004