Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Hetero-integrated strained silicon n- and p-MOSFETs

Hetero-integrated strained silicon n- and p-MOSFETs

US Patent 7396747 · Granted Jul 8, 2008

Estimated economic value: $9,414,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device2025
Semiconductor devices and methods for fabricating the same2025
Semiconductor devices and methods for fabricating the same2024
Dielectric isolated fin with improved fin profile2023
Personal safety alarm2023
Flat mouth outlet pipe baffle of an air conditioner2023
Gate-all-around (GAA) transistors with shallow source/drain regions and methods 2023
Field-effect transistors (FET) circuits employing topside and backside contacts 2022
Earplug2022
Hybrid conductor integration in power rail2022
Gate-all-around (GAA) transistors with additional bottom channel for reduced par2022
Multi-terminal cross-point synaptic device using nanocrystal dot structures2021