Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming embedded strained drain/source regions based on a combined spacer and cavity etch process

Method for forming embedded strained drain/source regions based on a combined spacer and cavity etch process

US Patent 7381622 · Granted Jun 3, 2008

Estimated economic value: $5,507,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Dynamically applied processes for mitigating adversarial jamming attack events2025
AI model based deployment of an AI model2025
Dual metal gate structures on nanoribbon semiconductor devices2025
Context-aware tagging for augmented reality environments2025
Real-time adjustment and deployment of regulatory policies2025
Source/drain regions in integrated circuit structures2025
Integrated circuit structures with gate cuts above buried power rails2025
Gate spacing in integrated circuit structures2025
Self-aligned lateral contacts2025
Orchestration of workloads involving an AI model2025
Transistor arrangements with stacked trench contacts and gate straps2025
Stacked vias with bottom portions formed using selective growth2025