Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements

Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements

US Patent 7369427 · Granted May 6, 2008

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods for forming structures with desired crystallinity for MRAM applications2025
Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy2025
Nonvolatile memory device including dual memory layers2025
Pinned shield with controllable exchange bias field2025
Nonvolatile memory device including dual memory layers2025
Shielding of packaged magnetic random access memory2025
Spin-orbit torque MRAM structure and manufacture thereof2025
Multilayered seed for perpendicular magnetic structure including an oxide layer2024
Magnetic memory element including perpendicular enhancement layers and dual oxid2024
Read sensor with ordered heusler alloy free layer and semiconductor barrier laye2024
Vertical transistor fabrication for memory applications2024
Magnetic memory devices and methods of formation2024