Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Stacked columnar 1T-nMTJ MRAM structure and its method of formation and operation

Stacked columnar 1T-nMTJ MRAM structure and its method of formation and operation

US Patent 7339811 · Granted Mar 4, 2008

Estimated economic value: $2,228,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Silicided recessed silicon2015
Variable resistance memory device having reduced bottom contact area and method 2013
Hybrid MRAM array structure and operation2013
Method of fabricating integrated circuitry2013
Variable resistance memory device having reduced bottom contact area and method 2013
Hybrid MRAM array structure and operation2012
Variable resistance memory device having reduced bottom contact area and method 2011
Method of forming a transistor gate of a recessed access device, method of formi2011
Stacked memory cell structure and method of forming such a structure2011
Stacked memory cell structure and method of forming such a structure2011
Method of fabricating integrated circuitry2011
Hybrid MRAM array structure and operation2010