Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of doping a conductive layer near a via

Method of doping a conductive layer near a via

US Patent 7300871 · Granted Nov 27, 2007

Estimated economic value: $22,929,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Low to moderate temperature nanolaminate heater2011
Cooling micro-channels2010
Integrated re-combiner for electroosmotic pumps using porous frits2010
Method of forming a stack of heat generating integrated circuit chips with inter2010
Area X-ray or UV camera system for high-intensity beams2010
Electroosmotic pump using nanoporous dielectric frit2010
Etch stop layer for silicon (Si) via etch in three-dimensional (3-D) wafer-to-wa2009
Using external radiators with electroosmotic pumps for cooling integrated circui2009
Apparatus and method integrating an electro-osmotic pump and microchannel assemb2009
Microelectronic assembly having thermoelectric elements to cool a die and a meth2009
Apparatus and method integrating an electro-osmotic pump and microchannel assemb2008
Method and structure for interfacing electronic devices2008