Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fabrication of low leakage-current backside illuminated photodiodes

Fabrication of low leakage-current backside illuminated photodiodes

US Patent 7297927 · Granted Nov 20, 2007

Estimated economic value: $595,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Capacitive bypass2011
Capacitive bypass2009
Fabrication of low leakage-current backside illuminated photodiodes2008
Fabrication of low leakage-current backside illuminated photodiodes2008
Fabrication of low leakage-current backside illuminated photodiodes2008
Fabrication of low leakage-current backside illuminated photodiodes2008
Fabrication of low leakage-current backside illuminated photodiodes2007
Fabrication of low leakage-current backside illuminated photodiodes2007
Fabrication of low leakage-current backside illuminated photodiodes2007
Fabrication of low leakage-current backside illuminated photodiodes2007
Technique for suppression of edge current in semiconductor devices2007
Optical multiphase flow sensor2006