Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High efficiency group III nitride-silicon carbide light emitting diode

High efficiency group III nitride-silicon carbide light emitting diode

US Patent 7259402 · Granted Aug 21, 2007

Estimated economic value: $9,415,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Silicon carbide wafers with relaxed positive bow and related methods2024
Laser-assisted method for parting crystalline material2024
Carrier-assisted method for parting crystalline material along laser damage regi2024
Laser-assisted method for parting crystalline material2023
High density pixelated LED and devices and methods thereof2023
Silicon carbide wafers with relaxed positive bow and related methods2023
High density pixelated LED and devices and methods thereof2022
Laser-assisted method for parting crystalline material2022
Silicon carbide wafers with relaxed positive bow and related methods2021
Carrier-assisted method for parting crystalline material along laser damage regi2021
Gas cooled LED lamp2021
High density pixelated LED and devices and methods thereof2021