Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method and device to reduce gate-induced drain leakage (GIDL) current in thin gate oxides MOSFETs

Method and device to reduce gate-induced drain leakage (GIDL) current in thin gate oxides MOSFETs

US Patent 7247919 · Granted Jul 24, 2007

Estimated economic value: $2,591,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Channel conduction in semiconductor devices2024
Low capacitance through substrate via structures2024
Integrated structures comprising vertical channel material and having conductive2024
Pixel with strained silicon layer for improving carrier mobility and blue respon2024
Methods of forming diodes2024
Field-effect transistors and methods of their formation2023
Gate-all-around floating-gate field effect memory transistor constructions inclu2023
Channel conduction in semiconductor devices2023
Integrated assemblies containing diffusion alleviating two-dimensional materials2023
Integrated structures comprising vertical channel material and having conductive2023
Low capacitance through substrate via structures2022
Integrated structures containing vertically-stacked memory cells2022