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Home › Semiconductor device which employs an interlayer insulating film of a low mechanical strength and a highly reliable metal pad, and a method of manufacturing the same

Semiconductor device which employs an interlayer insulating film of a low mechanical strength and a highly reliable metal pad, and a method of manufacturing the same

US Patent 7202565 · Granted Apr 10, 2007

Estimated economic value: $248,000 ⓘ

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