Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Capacitor for integration with copper damascene processes and a method of manufacture therefore

Capacitor for integration with copper damascene processes and a method of manufacture therefore

US Patent 7135733 · Granted Nov 14, 2006

Estimated economic value: $7,457,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Thin film batteries comprising a glass or ceramic substrate2018
Igniter position for a combustor of a gas turbine engine2018
Integration of shallow trench isolation and through-substrate vias into integrat2017
Stacked interconnect heat sink2015
Method of fabrication of through-substrate vias2015
Method of identifying and/or programming an integrated circuit2014
Preventing electronic device counterfeits2014
Integration of shallow trench isolation and through-substrate vias into integrat2014
Mitigation of detrimental breakdown of a high dielectric constant metal-insulato2014
Secure random number generator2013
Solder bump structure for flip chip semiconductor devices and method of manufact2013
Stacked interconnect heat sink2013