Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Reducing defect formation within an etched semiconductor topography

Reducing defect formation within an etched semiconductor topography

US Patent 7129178 · Granted Oct 31, 2006

Estimated economic value: $6,083,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Eyecup for an eye mask2025
Remote control2025
Speaker2025
Method for preventing line bending during metal fill process2025
Deposition of films using molybdenum precursors2025
Strap of an eyemask2025
Strap of an eyemask2025
Method and control circuit for controlling an active rear axle steering of a mot2024
Chambers and coatings for reducing backside damage2024
Strap for eyemask2024
Fast gas exchange apparatus, system, and method2024
Eyecup for an eyemask2024