Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of fabricating a dual damascene interconnect structure

Method of fabricating a dual damascene interconnect structure

US Patent 7115517 · Granted Oct 3, 2006

Estimated economic value: $12,847,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Pharmaceutical formulations containing Nalbuphine2025
Cooling container for computing devices2025
Hybrid dynamic vision sensor and CMOS device for motion compensation2025
Multiple control interface for medical ventilator2022
Thin film semiconductor material produced through reactive sputtering of zinc ta2020
Method of IGZO and ZnO TFT fabrication with PECVD SiO2 passivation2018
Methods and apparatuses for delaminating process pieces2017
Method of IGZO and ZNO TFT fabrication with PECVD SiO2 passivation2017
Thin film semiconductors made through low temperature process2016
Buffer layers for metal oxide semiconductors for TFT2016
Thin film metal oxynitride semiconductors2015
TFT with insert in passivation layer or etch stop layer2015