Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for fabricating a hole trench storage capacitor in a semiconductor substrate, and hole trench storage capacitor

Method for fabricating a hole trench storage capacitor in a semiconductor substrate, and hole trench storage capacitor

US Patent 7084029 · Granted Aug 1, 2006

Estimated economic value: $215,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device including a leveling dielectric fill material2019
Semiconductor devices and manufacturing techniques for reduced aspect ratio of n2019
Detection of gate-to-source/drain shorts2018
FDSOI-capacitor2018
Systems and methods for detecting change in species in an environment2018
FDSOI—capacitor2017
Test structures and method of forming an according test structure2017
Etch release residue removal using anhydrous solution2017
Systems and methods for detecting change in species in an environment2017
Systems and methods for detecting change in species in an environment2017
Semiconductor device with thin-film resistor2017
Integrated circuit product with bulk and SOI semiconductor devices2017