Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of body contact for SOI MOSFET

Method of body contact for SOI MOSFET

US Patent 6963113 · Granted Nov 8, 2005

Estimated economic value: $158,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods of forming semiconductor devices2016
Topography driven OPC and lithography flow2015
Semiconductor trench structure having a silicon nitride layer overlaying an oxid2015
Etch failure prediction based on wafer resist top loss2014
Method and system for metal barrier and seed integration2012
Method of eliminating micro-trenches during spacer etch2012
Method of improving adhesion strength of low dielectric constant layers2012
Method with high gapfill capability for semiconductor devices2011
Method of improving a shallow trench isolation gapfill process2011
Method for forming low dielectric constant fluorine-doped layers2011
Via electromigration improvement by changing the via bottom geometric profile2010
Via electromigration improvement by changing the via bottom geometric profile2010