Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Group III-nitride growth on Si substrate using oxynitride interlayer

Group III-nitride growth on Si substrate using oxynitride interlayer

US Patent 6906351 · Granted Jun 14, 2005

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Neural network based prediction of semiconductor device response2025
Polarization-engineered heterogeneous semiconductor heterostructures2025
Low resistance photoconductive semiconductor switch (PCSS)2025
Polarization-engineered heterogeneous semiconductor heterostructures2025
Light controlled switch module2024
Devices with semiconductor hyperbolic metamaterials2022
Growth of crystalline materials on two-dimensional inert materials2019
Growth of crystalline materials on two-dimensional inert materials2019
Method of decontamination of process chamber after in-situ chamber clean2018
Coalesced nanowire structures with interstitial voids and method for manufacturi2017
Tungsten nitrido precursors for the CVD of tungsten nitride, carbonitride, and o2017
Nanopyramid sized opto-electronic structure and method for manufacturing of same2016