{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Site-specific methodology for localization and analyzing junction defects in mosfet devices", "item": "https://www.patentleaderboard.com/patent/6884641"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Site-specific methodology for localization and analyzing junction defects in mosfet devices

Site-specific methodology for localization and analyzing junction defects in mosfet devices

US Patent 6884641 · Granted Apr 26, 2005

Estimated economic value: $8,819,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Low resistance contacts including intermetallic alloy of nickel, platinum, titan2024
Sacrificial material facilitating protection of a substrate in a qubit device2024
Low resistance contacts including intermetallic alloy of nickel, platinum, titan2024
Spurious junction prevention via in-situ ion milling2023
Grain size control of superconducting materials in thin films for Josephson junc2023
Structures and methods for equivalent oxide thickness scaling on silicon germani2021
Low resistance contacts including intermetallic alloy of nickel, platinum, titan2021
Low resistance contacts including intermetallic alloy of nickel, platinum, titan2021
Mitigation of hot carrier damage in field-effect transistors2020
Shallow, abrupt and highly activated tin extension implant junction2020
Time temperature monitoring system2019
CMOS compatible non-filamentary resistive memory stack2019