Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing a trench transistor having a heavy body region

Method of manufacturing a trench transistor having a heavy body region

US Patent 6828195 · Granted Dec 7, 2004

Estimated economic value: $19,752,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Process of forming an electronic device including a component structure adjacent2025
Reverse recovery charge reduction in semiconductor devices2025
Integrated transistor and resistor-diode-capacitor snubber2024
Reverse recovery charge reduction in semiconductor devices2023
Semiconductor device and structure therefor2023
Real time fault localization using combinatorial test design techniques and test2023
Electronic device including a charge storage component2023
Electronic device including doped regions and a trench between the doped regions2022
Integrated stacked ESD network in trench for trench DMOS2022
Machine code analysis for identifying software defects2022
Trench MOSFET contacts2022
Method of forming a semiconductor device and structure therefor2022