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Home › Method for producing a cavity in a monocrystalline silicon substrate and a semiconductor component having a cavity in a monocrystalline silicon substrate with an epitaxial covering layer

Method for producing a cavity in a monocrystalline silicon substrate and a semiconductor component having a cavity in a monocrystalline silicon substrate with an epitaxial covering layer

US Patent 6821863 · Granted Nov 23, 2004

Estimated economic value: $65,000 ⓘ

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