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Home › Application of the CVD bilayer ARC as a hard mask for definition of the subresolution trench features between polysilicon wordlines

Application of the CVD bilayer ARC as a hard mask for definition of the subresolution trench features between polysilicon wordlines

US Patent 6818141 · Granted Nov 16, 2004

Estimated economic value: $6,082,000 ⓘ

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