Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for producing semi-insulating resistivity in high purity silicon carbide crystals

Method for producing semi-insulating resistivity in high purity silicon carbide crystals

US Patent 6814801 · Granted Nov 9, 2004

Estimated economic value: $30,095,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Reduced optical absorption for silicon carbide crystalline materials2024
Multi-channel network-on-a-chip2020
Method for manufacturing SiC wafer fit for integration with power device manufac2018
System on chip and method therefor2017
Integrated circuit device and method for providing data access control2016
Method for manufacturing SiC wafer fit for integration with power device manufac2016
System for dynamically distributing an available memory resource to redundant an2015
Micropipe-free silicon carbide and related method of manufacture2015
Method for producing semi-insulating resistivity in high purity silicon carbide 2015
Method for producing semi-insulating resistivity in high purity silicon carbide 2015
Method for producing semi-insulating resistivity in high purity silicon carbide 2015
Method for producing semi-insulating resistivity in high purity silicon carbide 2015