Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Analytical method to measure nitrogen concentration in single crystal silicon

Analytical method to measure nitrogen concentration in single crystal silicon

US Patent 6803576 · Granted Oct 12, 2004

Estimated economic value: $19,611,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods for detecting defects in a single crystal silicon structure2025
Ingot puller apparatus having a flange that extends from the funnel or from the 2025
Crystal pulling systems having a cover member for covering the silicon charge an2025
Crystal pulling systems having a cover member for covering the silicon charge2024
Ingot puller apparatus having a flange that extends from the funnel or from the 2024
Methods for preparing an ingot in an ingot puller apparatus and methods for sele2024
Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxi2024
Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxi2024
Methods for growing single crystal silicon ingots that involve silicon feed tube2024
Apparatus for stressing semiconductor substrates2023
Apparatus for stressing semiconductor substrates2023
High resistivity single crystal silicon ingot and wafer having improved mechanic2023