Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gas driven planetary rotation apparatus and methods for forming silicon carbide layers

Gas driven planetary rotation apparatus and methods for forming silicon carbide layers

US Patent 6797069 · Granted Sep 28, 2004

Estimated economic value: $12,568,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Large diameter silicon carbide wafers2025
Large dimension silicon carbide single crystalline materials with reduced crysta2024
Large diameter silicon carbide wafers2024
Dislocation distribution for silicon carbide crystalline materials2022
Reduction of carrot defects in silicon carbide epitaxy2018
High power silicon carbide (SiC) PiN diodes having low forward voltage drops2016
Methods for controllably induction heating an article2015
Methods for controllably induction heating an article2015
Stable power devices on low-angle off-cut silicon carbide crystals2013
Deposition systems and susceptor assemblies for depositing a film on a substrate2013
Deposition systems and susceptor assemblies for depositing a film on a substrate2013
Directed reagents to improve material uniformity2011