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Home › Single poly bipolar transistor and method that uses a selectively epitaxially grown highly-boron-doped silicon layer as a diffusion source for an extrinsic base region

Single poly bipolar transistor and method that uses a selectively epitaxially grown highly-boron-doped silicon layer as a diffusion source for an extrinsic base region

US Patent 6699741 · Granted Mar 2, 2004

Estimated economic value: $24,835,000 ⓘ

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