Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Low dielectric constant materials prepared from photon or plasma assisted chemical vapor deposition and transport polymerization of selected compounds

Low dielectric constant materials prepared from photon or plasma assisted chemical vapor deposition and transport polymerization of selected compounds

US Patent 6663973 · Granted Dec 16, 2003

Estimated economic value: $144,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Dual etch-stop layer structure2025
Interconnection structure and methods of forming the same2025
Method of fabricating semiconductor device with reduced trench distortions2025
Method and structure of cut end with self-aligned double patterning2025
Self-assembled dielectric on metal rie lines to increase reliability2025
Methods of etching metals in semiconductor devices2025
Self-aligned interconnect structure2025
Dielectric on wire structure to increase processing window for overlying via2025
Method and structure for semiconductor device having gate spacer protection laye2025
Structure and method for an MRAM device with a multi-layer top electrode2025
Semiconductor device with self-aligned conductive features2025
Interconnect conductive structure comprising two conductive materials2025