{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Electron emission devices and field emission display devices having buffer layer of microcrystalline silicon", "item": "https://www.patentleaderboard.com/patent/6657376"}]}
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Electron emission devices and field emission display devices having buffer layer of microcrystalline silicon

US Patent 6657376 · Granted Dec 2, 2003

Estimated economic value: $2,846,000 ⓘ

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