Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Control of amount and uniformity of oxidation at the interface of an emitter region of a monocrystalline silicon wafer and a polysilicon layer formed by chemical vapor deposition

Control of amount and uniformity of oxidation at the interface of an emitter region of a monocrystalline silicon wafer and a polysilicon layer formed by chemical vapor deposition

US Patent 6642121 · Granted Nov 4, 2003

Estimated economic value: $19,357,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Vertical-conduction silicon carbide MOSFET device having improved gate biasing s2025
Process for manufacturing a semiconductor power device comprising charge-balance2018
Process for manufacturing a semiconductor power device comprising charge-balance2018
Process for manufacturing a semiconductor power device comprising charge-balance2017
Process for manufacturing a semiconductor power device comprising charge-balance2017
RF identification device with near-field-coupled antenna2015
RF identification device with near-field-coupled antenna2015
Process for manufacturing a semiconductor power device comprising charge-balance2015
Process for manufacturing a semiconductor power device comprising charge-balance2015
Vertical conduction power electronic device and corresponding realization method2014
Vertical conduction power electronic device and corresponding realization method2014
Power MOS electronic device and corresponding realizing method2013