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Home › Method for making three-dimensional metal-insulator-metal capacitors for dynamic random access memory (DRAM) and ferroelectric random access memory (FERAM)

Method for making three-dimensional metal-insulator-metal capacitors for dynamic random access memory (DRAM) and ferroelectric random access memory (FERAM)

US Patent 6630380 · Granted Oct 7, 2003

Estimated economic value: $360,000 ⓘ

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