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Home › Lateral DMOS transistor with first and second drain electrodes in respective contact with high-and low-concentration portions of a drain region

Lateral DMOS transistor with first and second drain electrodes in respective contact with high-and low-concentration portions of a drain region

US Patent 6624471 · Granted Sep 23, 2003

Estimated economic value: $14,097,000 ⓘ

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