Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Implant method for forming Si3N4 spacer

Implant method for forming Si3N4 spacer

US Patent 6624466 · Granted Sep 23, 2003

Estimated economic value: $5,092,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Vehicle steering wheel2025
Method of making bipolar transistor2022
Ultra high voltage semiconductor device with electrostatic discharge capabilitie2020
Method of making bipolar transistor2020
Ultra high voltage semiconductor device with electrostatic discharge capabilitie2019
Super junction with an angled trench, transistor having the super junction and m2018
Ultra high voltage semiconductor device with electrostatic discharge capabilitie2018
Semiconductor device and method of manufacturing the same2017
Bipolar transistor structure having split collector region and method of making 2017
Semiconductor structure and manufacturing method thereof2017
Ultra high voltage semiconductor device with electrostatic discharge capabilitie2016
Semiconductor device and method of manufacturing2015