Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for fabricating an integrated ferroelectric semiconductor memory and integrated ferroelectric semiconductor memory

Method for fabricating an integrated ferroelectric semiconductor memory and integrated ferroelectric semiconductor memory

US Patent 6613640 · Granted Sep 2, 2003

Estimated economic value: $120,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Deep alignment marks on edge chips for subsequent alignment of opaque layers2008
Method for structuring a silicon layer2008
Methods of patterning a magnetic stack of a magnetic memory cell and structures 2008
Microelectronic structure having a hydrogen barrier layer2007
MRAM cell with split conductive lines2007
Method for fabricating contacts for integrated circuits, and semiconductor compo2007
Method for fabricating contact-making connections2007
Encapsulation of conductive lines of semiconductor devices2006
Method of producing an electrode configuration and method of electrically contac2006
Fabrication process for a magnetic tunnel junction device2006
Method for improved alignment of magnetic tunnel junction elements2005
Method for patterning a layer of silicon, and method for fabricating an integrat2005