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Home › Method of cleaning a silicon substrate after blanket depositing a tungsten film by dipping in a solution of hydrofluoric acid, hydrochloric acid, and/or ammonium hydroxide

Method of cleaning a silicon substrate after blanket depositing a tungsten film by dipping in a solution of hydrofluoric acid, hydrochloric acid, and/or ammonium hydroxide

US Patent 6596630 · Granted Jul 22, 2003

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