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Home › METHOD OF CLEANING A SILICON SUBSTRATE AFTER BLANKET DEPOSITING A TUNGSTEN FILM BY DIPPING IN A SOLUTION HAVING HYDROFLUORIC ACID, HYDROCHLORIC ACID, AND/OR AMMONIUM HYDROXIDE PRIOR TO PATTERNING THE TUNGSTEN FILM

METHOD OF CLEANING A SILICON SUBSTRATE AFTER BLANKET DEPOSITING A TUNGSTEN FILM BY DIPPING IN A SOLUTION HAVING HYDROFLUORIC ACID, HYDROCHLORIC ACID, AND/OR AMMONIUM HYDROXIDE PRIOR TO PATTERNING THE TUNGSTEN FILM

US Patent 6432815 · Granted Aug 13, 2002

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