{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Capacitor constructions comprising a nitrogen-containing layer over a rugged polysilicon layer", "item": "https://www.patentleaderboard.com/patent/6583441"}]}
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Home › Capacitor constructions comprising a nitrogen-containing layer over a rugged polysilicon layer

Capacitor constructions comprising a nitrogen-containing layer over a rugged polysilicon layer

US Patent 6583441 · Granted Jun 24, 2003

Estimated economic value: $3,482,000 ⓘ

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