Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fabrication process for a semiconductor device with an isolated zone

Fabrication process for a semiconductor device with an isolated zone

US Patent 6503812 · Granted Jan 7, 2003

Estimated economic value: $17,254,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Stitching to enable dense interconnect arrangements2025
Power rail between fins of a transistor structure2025
Gate-all-around integrated circuit structures having germanium-diffused nanoribb2025
Source/drain regions in integrated circuit structures2025
Gate spacing in integrated circuit structures2025
Self-aligned lateral contacts2025
Transistor arrangements with stacked trench contacts and gate straps2025
Stacked vias with bottom portions formed using selective growth2025
Device contact sizing in integrated circuit structures2025
Use of a placeholder for backside contact formation for transistor arrangements2024
Self aligned buried power rail2024
Buried power rails with self-aligned vias to trench contacts2024