Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Selectively etching silicon using fluorine without plasma

Selectively etching silicon using fluorine without plasma

US Patent 6500356 · Granted Dec 31, 2002

Estimated economic value: $23,154,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method and apparatus for encapsulation of an organic light emitting diode2019
High dose implantation strip (HDIS) in H2 base chemistry2018
Methods for stripping photoresist and/or cleaning metal regions2016
Auto-sequencing multi-directional inline processing method2016
Auto-sequencing inline processing apparatus2014
High dose implantation strip (HDIS) in H2 base chemistry2014
Showerhead assembly for plasma processing chamber2013
Auto-sequencing multi-directional inline processing apparatus2013
Simultaneous front side ash and backside clean2013
Methods for stripping photoresist and/or cleaning metal regions2013
High dose implantation strip (HDIS) in H2 base chemistry2012
Photoresist strip method for low-k dielectrics2011