Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases

Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases

US Patent 6479373 · Granted Nov 12, 2002

Estimated economic value: $78,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gas injector for reaction regions2021
Method of forming a self-aligned stack gate structure for use in a non-volatile 2017
Self-aligned stack gate structure for use in a non-volatile memory array and a m2016
Method of preparing a coating solution and a corresponding use of the coating so2011
Method of preventing etch profile bending and bowing in high aspect ratio openin2010
Method for forming a structure on a substrate and device2010
Apparatus for processing a substrate2009
Photolithographic patterning process using a carbon hard mask layer of diamond-l2008
Fabrication method for a semiconductor structure2007
Method for production of a semiconductor structure2006
Method for fabricating a semiconductor structure2006
Process for producing an etching mask on a microstructure, in particular a semic2006