{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Method of manufacturing a semiconductor structure with treatment to sacrificial stop layer producing diffusion to an adjacent low-k dielectric layer lowering the constant", "item": "https://www.patentleaderboard.com/patent/6475929"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing a semiconductor structure with treatment to sacrificial stop layer producing diffusion to an adjacent low-k dielectric layer lowering the constant

Method of manufacturing a semiconductor structure with treatment to sacrificial stop layer producing diffusion to an adjacent low-k dielectric layer lowering the constant

US Patent 6475929 · Granted Nov 5, 2002

Estimated economic value: $1,578,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Creped fibrous structures2025
Discretizer and method of using same2025
Article of manufacture making system2025
Device and method for recovering arsenic and gallium2025
Fibrous structures comprising regions having different micro-CT intensive proper2025
Apparatus for use with hydrogen radicals and method of using same2025
Coated drug compositions and methods of preparing the same2024
Semiconductor processing preclean methods and apparatus2024
Composite transparent film, preparation method thereof, and method for continuou2024
Low temperature process for preparing silicon oxide coated pharmaceuticals2024
Auto generation and tuning tool for convolution kernels2024
Fibrous structures2024