Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Border modification for proximity effect correction in lithography

Border modification for proximity effect correction in lithography

US Patent 6436607 · Granted Aug 20, 2002

Estimated economic value: $16,370,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for compressed data transmission in a maskless lithography sys2016
Pillar-supported array of micro electron lenses2015
Methods of measuring overlay errors in area-imaging e-beam lithography2015
Pattern data system for high-performance maskless electron beam lithography2014
Stabilized high brightness LED suitable as calibration standard2014
Quasi-annular reflective electron patterning device2013
Microengineered optical filters that closely match predefined transmission curve2011
Electron beam patterning2011
Multi-function module for an electron beam column2010
Electron beam lithography method and apparatus using a dynamically controlled ph2010
Electron anti-fogging baffle used as a detector2009
Critical dimension effects correction in raster pattern generator2009