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Home › Non-volatile memory cell with a single level of polysilicon, in particular of the flash EEPROM type, and method for manufacturing the same

Non-volatile memory cell with a single level of polysilicon, in particular of the flash EEPROM type, and method for manufacturing the same

US Patent 6410389 · Granted Jun 25, 2002

Estimated economic value: $17,422,000 ⓘ

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