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Home › Using a negative gate erase to increase the cycling endurance of a non-volatile memory cell with an oxide-nitride-oxide (ONO) structure

Using a negative gate erase to increase the cycling endurance of a non-volatile memory cell with an oxide-nitride-oxide (ONO) structure

US Patent 6381179 · Granted Apr 30, 2002

Estimated economic value: $1,930,000 ⓘ

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