Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming low resistance gate electrode

Method of forming low resistance gate electrode

US Patent 6376350 · Granted Apr 23, 2002

Estimated economic value: $2,653,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Peer-to-peer data object transfer and state management2025
Rewards for a virtual cash card2023
Cryptocurrency rewards for a virtual cash card2022
Semiconductor structure with multiple transistors having various threshold volta2019
Semiconductor structure with multiple transistors having various threshold volta2018
Semiconductor structure with multiple transistors having various threshold volta2017
CMOS structures and processes based on selective thinning2016
Method for fabricating a transistor with reduced junction leakage current2016
Semiconductor structure with multiple transistors having various threshold volta2016
High uniformity screen and epitaxial layers for CMOS devices2015
Deeply depleted MOS transistors having a screening layer and methods thereof2015
Semiconductor structure with substitutional boron and method for fabrication the2015