Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Plasma etch method for forming patterned layer with enhanced critical dimension (CD) control

Plasma etch method for forming patterned layer with enhanced critical dimension (CD) control

US Patent 6350390 · Granted Feb 26, 2002

Estimated economic value: $4,231,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

FinFET structure with different fin heights and method for forming the same2022
Core for food products mold2022
FinFET structure with different fin heights and method for forming the same2020
Decreasing neural network inference times using softmax approximation2020
Touch display panel2020
Semiconductor methods and devices2019
FinFET structure with different fin heights and method for forming the same2019
Method for determining tire installation location, tire pressure monitoring devi2019
Structures and methods for fabricating semiconductor devices using fin structure2019
In-cell touch display panel2019
Touch display device and associated control method2019
Electronic apparatus and mode control method and touch sensing method thereof2018