Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Self-test and correction of loss of charge errors in a flash memory, erasable and programmable by sectors thereof

Self-test and correction of loss of charge errors in a flash memory, erasable and programmable by sectors thereof

US Patent 6275960 · Granted Aug 14, 2001

Estimated economic value: $39,544,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Switching cell with direct contact to fixed resistor element2025
Phase change memory2025
Phase-change memory cell2024
Phase-change memory cell2023
Memory device2023
Memory device2022
Memory cell2022
Memory device2021
Semiconductor constructions and methods of forming memory cells2017
Semiconductor constructions and methods of forming memory cells2015
Shallow trench isolation for a memory2015
Shallow trench isolation for a memory2014