Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Enhancements to polysilicon gate

Enhancements to polysilicon gate

US Patent 6248638 · Granted Jun 19, 2001

Estimated economic value: $43,385,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nanoparticle cap layer2011
Nanoparticle cap layer2011
Integrated circuit having a doped porous dielectric and method of manufacturing 2008
Selective refractory metal and nitride capping2007
Method of fabricating low dielectric constant dielectric films2006
Inhomogeneous materials having physical properties decoupled from desired functi2005
Selective refractory metal and nitride capping2005
Method of fabricating low dielectric constant dielectric films2004
Integrated circuit having a doped porous dielectric and method of manufacturing 2004
Methods for forming a fuse in a semiconductor device2004
Low pressure, low temperature, semiconductor gap filling process2003
Surface modified interconnects2003