Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing a self-aligned vertical bipolar transistor

Method of manufacturing a self-aligned vertical bipolar transistor

US Patent 6235601 · Granted May 22, 2001

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Microwave monolithic integrated circuit with coplaner waveguide having silicon-o1999
Microwave power SOI-MOSFET with high conductivity metal gate1997
Monolithic microwave circuit with thick conductors1997
Method of manufacturing a reflective display1996
Method of producing VDMOS device of increased power density1995
Vertical power MOS device with increased ruggedness and method of fabrication1994
Electrically erasable and programmable read-only memory with source and drain re1994
Vertical power MOS device with increased ruggedness and method of fabrication1993
Nonvolatile trench memory device and self-aligned method for making such a devic1993
Power field effect devices having small cell size and low contact resistance1991
MO/TI Contact to silicon1991
Ohmic contacts and interconnects to silicon and method of making same1989